

REL-WLR Reliability Test Algorithms
Metrics Technology presents a new extension to its I/CV product: algorithms to perform WLR measurements.
The REL-WLR Algorithms provide turn-key WLR style tests for the Metrics I/CV Software. The REL-WLR algorithms provide support for several different semiconductor parameter analyzers from the same test. Preserve your investment in instrumentation and increase the utility of your equipment. Utilize several different pieces of equipment to perform the same test.
How To Purchase
Metrics Technology REL-WLR Algorithms are included in the Metrics I/CV Annual License.
Test Algorithms
The REL-WLR software is a collection of algorithms for testing Reliability of Semiconductor Devices. The algorithms provided are listed below with a description of their function.
Oxide Tests
| V_TDDB |
Time dependent dielectric breakdown measurement using constant voltage. Breakdown is measured by %change or exceeding a threshold value. |
| I_TDDB |
Time dependent dielectric breakdown measurement using constant current. Breakdown is measured by %change or exceeding a threshold value. |
| J_RAMP |
Ramped current test that measures the device voltage and monitors for breakdown. The method is compliant with JEDEC and FSA publications. |
| J_RAMPB |
Ramped current test that measures the device voltage and monitors for breakdown. The device is ramped to a specified current and then the current is held constant while monitoring for breakdown. |
| V_RAMP |
Ramped voltage test that measures the device current and monitors for breakdown. The method is compliant with JEDEC and FSA publications. |
| V_SILC |
A variation of the TDDB test that applies a stress voltage and measures the device performance a Vuse as a function of stress time. |
Stress-Measure Tests
| HCI |
Stress-Measure testing of a MOS-type device with monitoring of the device parameters for failure. |
| NBTI |
Stress-Measure NBTI testing of a device with monitoring of the device parameters for failure. |
| Ispot |
A single-point measurement of device performance at specified bias values. |
| Vtmos |
Threshold voltage measurement. |
| Gummel |
Gummel characteristic measurement. |
| RGummel |
Reverse Gummel characteristic measurement. |
| DCStress |
A Stress function that allows for the stressing of a device with DC Bias. This can be combined with the above characterization tests to create a unique test program. |
| ACStress* |
A Stress function that allows for the stressing of a device with an AC Bias (defined by a pulse generator). This can be combined with the above characterization tests to create a unique test program. |
| CP_CA* |
A charge pumping test that combines a DC Meter with a pulse generator. This test provides a constant amplitude pulse that is offset while the substrate current is measured. |
| CP_VA* |
A charge pumping test that combines a DC Meter with a pulse generator. This test provides a variable amplitude pulse while the substrate current is measured. |
| CP_VF* |
A charge pumping test that combines a DC Meter with a pulse generator. This test provides a variable frequency pulse while the substrate current is measured. |
* Requires a supported Pulse Generator (8110, 81110, or 41501B/C)
System Software
Metrics REL-WLR is designed to run with Metrics I/CV software (sold seperately). Metrics I/CV system software automates wafer stepping and switch control for the REL-WLR algorithms.
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